A silicon wafer has 100 nm of oxide it and is inserted in a furnace at – McqOptions

MCQOPTIONS

1.	A silicon wafer has 100 nm of oxide it and is inserted in a furnace at a temperature above 1000¬∞C for further oxidation in dry oxygen. The oxidation rate
A.	is independent of current oxide thickness and temperature
B.	is independent of current oxide thickness but depends on temperature
C.	slows down as the oxide grows
D.	is zero as the existing oxide prevents further oxidation
Answer» E.

Discussion

No Comment Found

Related MCQs

For a standard 2nd order system the maximum overshoot is 10% to an unit step input. If the magnitude of the input is doubled, then maximum overshoot and percentage of maximum overshoot is:
The number of distinct Boolean expressions of 3 variables is
A DC voltage source is connected across a series R - L - C circuit. Under steady-state conditions, the applied DC voltage drops entirely across the
If (225)Y = (165)8 find value of Y
If A = then |A50| will be
An LTI system having transfer function and input x(t) = sin (t + 1) is in steady state. The output is sampled at a rate œâs rad/s to obtain the final output {y(k)}. Which of the following is true?
The feedback control system shown in figure is stable.
Assertion (A): Conductors do not permit propagation of waves more than a short distance into the conductor at microwave frequencies.Reason (R): The relaxation time constant for conductors is much small than the period of centimetric EM wave.
What are the counting stages (Q1, Q2) for the counter shown in the figure below?
Two coils X of 1000 turns and Y of 2000 turns are placed such that 60% of the flux produced by coil X links coil Y. A current of 1 A in coil X produces 0.1 wb flux. The mutual inductance between coils is