A high gain MESFET packaged device of case-to-channel thermal resistance of the device is 4.5°C/Watt provides 8 W RF output power taking 20 W DC power. What will be the channel temperature of the device if the case temperature of the device maintained at 55°C?

A high gain MESFET packaged device of case-to-channel thermal resistan

1.	A high gain MESFET packaged device of case-to-channel thermal resistance of the device is 4.5°C/Watt provides 8 W RF output power taking 20 W DC power. What will be the channel temperature of the device if the case temperature of the device maintained at 55°C?
A.	109°C
B.	145°C
C.	59.5°C
D.	91°C
Answer» B. 145°C

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A high gain MESFET packaged device of case-to-channel thermal resistance of the device is 4.5°C/Watt provides 8 W RF output power taking 20 W DC power. What will be the channel temperature of the device if the case temperature of the device maintained at 55°C?

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